PaperHigh-field capture of electrons by Coulomb-attractive centers in silicon dioxideT.H. NingJournal of Applied Physics
Conference paperSubmicron high performance bipolar technologyT.C. Chen, J.D. Cressler, et al.VLSI Technology 1989
PaperHistory and future perspective of the modern silicon bipolar transistorT.H. NingIEEE Transactions on Electron Devices
Conference paperTechnologies to further reduce soft error susceptibility in SOIP. Oldiges, R.H. Dennard, et al.IEDM 2009