Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We report on transport and EPR studies of (TMTSF)2-PF6, both in its pristine form and when doped with the sulfur analog TMTTF. All samples undergo a single phase transition which can be seen in both the transport and magnetic data and which, in the undoped material, occurs at ∼11.5 K. The effects of a 3% dopant concentration are dramatic: a 40% rise in the transition temperature, a 130% rise in the room- temperature spin susceptibility and a 30% fall in the low-temperature g shift. Possible causes are discussed. © 1981.
T.N. Morgan
Semiconductor Science and Technology
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Ronald Troutman
Synthetic Metals
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP