Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
At low temperatures, the spin-spin relaxation mechanism in PrCl3 is caused by the fluctuating electric-field gradients due to the transverse Pr moments. In this paper, a finite-chain calculation for the transverse autocorrelation function Sxx(q,ω) has been performed and evaluated in the temperature range kT/J < 4. Qualitative agreement is found for the temperature dependence of the spin-spin relaxation time, and an explanation is proposed for the deviations observed. © 1983.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering