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IEDM 1998
A technique is described by which recombination lifetime may be resolved from trapping effects. Analysis is shown by which trap capture and release times may be measured as well as density and energy level of trapping levels. It is shown that superlinearity in CdSe sintered layers arises not from "activation", as described in currently held models of variation of recombination time with light level, but rather is associated with increase of mobility with light level. © 1961.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
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SPIE Advances in Semiconductors and Superconductors 1990
Julien Autebert, Aditya Kashyap, et al.
Langmuir