Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta