Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
For a two-dimensional hole gas in GaAsGaxAl1-xAs in a strong quantizing magnetic field such that only one Landau level is occupied, a large splitting of the otherwise sharp cyclotron line is observed to occur at a magnetic field value which increases systematically with the areal hole density. The possible relationship of this phenomenon to anomalous cyclotron behavior observed in the two-dimensional electron gas, or an explanation in terms of an intrasubband Landau-level crossing, are discussed. © 1986 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Frank Stem
C R C Critical Reviews in Solid State Sciences
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Ronald Troutman
Synthetic Metals