Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The magnetotransport properties of two-dimensional holes in GaAsGaAlAs heterostructures are reviewed, with emphasis in the high field regime. Temperature dependence measurements of the 1 3 and 2 3 states of the fractional quantum Hall effect yield activation energies comparable to those of 2D electrons, but that are not directly correlated with low-temperature mobilities. © 1986.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
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Solid State Communications
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Surface Review and Letters