E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Paper
Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
Abstract
A spherical harmonics expansion method of the Boltzmann Transport Equation (BTE) is applied to investigate the carrier energy spectrum of a two-dimensional MOSFET up to 3 eV. By this method hot-electron population is obtained all over the device cross-section without the problems of statistical noise and large computational requirements typical of Monte Carlo methods. © 1993.
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