G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Paper
Two-subband screening and transport in (001)silicon inversion layers
Abstract
The effects of occupation of a second subband on screening and on scattering by fixed charges and by interface roughness are estimated for (001)Si inversion layers at low temperatures and at 77 K. © 1978.
Related
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
P. Alnot, D.J. Auerbach, et al.
Surface Science
Hiroshi Ito, Reinhold Schwalm
JES