Conference paper
Stable SRAM cell design for the 32 nm node and beyond
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
Paper
Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator
Abstract
Silicon p+-i-n+ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 μm are presented. These devices exhibit high modulation efficiency, with a Vπ-L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit. © 2007 Optical Society of America.
Related
Bejamin G. Lee, Xiaogang Chen, et al.
IEEE Photonics Technology Letters
Folkert Horst, William M.J. Green, et al.
Photonics North 2009
Bejamin G. Lee, Xiaogang Chen, et al.
IEEE Photonics Technology Letters