Ultrahigh-vacuum sample transfer device with low-temperature capability

N.J. DiNardo; J.E. Demuth; W.A. Thompson; P.G. Ledermann

doi:10.1063/1.1137966

Review of Scientific Instruments

Paper

01 Dec 1984

Ultrahigh-vacuum sample transfer device with low-temperature capability

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Abstract

The design of a novel sample transfer device for use in surface studies in an ultrahigh-vacuum environment is discussed. The principle feature of this design is a broad sample temperature range (∼32-∼1270 K).

Conference paper

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Leed spectra determination of the atomic location of tellurium adsorbed on ni001

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JVSTA

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physica status solidi (b)

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Abstract

Related

REAL-TIME STUDY OF PARTICLE-INDUCED DISORDERING OF THE Si(111) - 7 multiplied by 7 SURFACE BY OPTICAL SECOND-HARMONIC GENERATION.

Leed spectra determination of the atomic location of tellurium adsorbed on ni001

Scanning tunneling microscopy studies of Si(111)-2x 1 surfaces

Evidence for “Unusual” Exchange–Correlation on Si(111) 7 × 7: Limitations of Density Functional Calculations for Charge Transfer Interactions on Semiconductor Surfaces