Unified model for drift velocities of electrons and holes in semiconductors as a function of temperature and electric field

An improved analytical formula for the drift velocities of hot electrons and holes in semiconductors is suggested. Calculated results from the model show striking agreements with the available experiments. Unlike the earlier ones, the model predicts the low-field peak velocity characteristics very well, and appears to exhibit wide applicability. It is claimed to be one of the most general models available in the literature, for which attempts are made to provide a theoretical basis. © 1992.