Using phthalocyanine precursors to prepare oxide thin films: decoupling the growth rate from the evaporation rate

E. Machler; F. Arrouy; E. Fritsch; J.G. Bednorz; H. Berke; J.R. Huber; J.P. Locquet

doi:10.1063/1.119837

Applied Physics Letters

Paper

04 Aug 1997

Using phthalocyanine precursors to prepare oxide thin films: decoupling the growth rate from the evaporation rate

View publication

Abstract

A new type of precursor, phthalocyanine, for the growth of thin films is proposed. The use of this precursor is illustrated by the growth of CuO and YBa2Cu3O7. Several advantages and implication of this novel deposition process are summarized.

Paper

Schiff base precursor compounds for the chemical beam epitaxy of oxide thin films. I. Deposition of CuO on MgO[001] using copper (II) bis(benzoylacetone)-ethylendiimine

E. Fritsch, E. Mächler, et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Paper

Molecular beam epitaxy and microstructural study of LSC thin films

K. Verbist, O. Milat, et al.

Physical Review B - CMMP

Paper

Variation of the in-plane penetration depth as a function of doping thin films on: Implications for the overdoped state

J.P. Locquet, Y. Jaccard, et al.

Physical Review B - CMMP

Paper

Transmission electron microscopy investigations of defects in molecular beam epitaxy-grown oxide films

E.J. Williams, A. Daridon, et al.

Journal of Alloys and Compounds

View all publications

Abstract

Related

Schiff base precursor compounds for the chemical beam epitaxy of oxide thin films. I. Deposition of CuO on MgO[001] using copper (II) bis(benzoylacetone)-ethylendiimine

Molecular beam epitaxy and microstructural study of LSC thin films

Variation of the in-plane penetration depth as a function of doping thin films on: Implications for the overdoped state

Transmission electron microscopy investigations of defects in molecular beam epitaxy-grown oxide films