Paper

01 Jan 1976

V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers

View publication

Abstract

No abstract available.

Paper

Divacancy binding enthalpy in semiconductors

J.A. Van Vechten

Physical Review B

Paper

I.3 The Effect of Doping on the Degradation of GaAs-Al_xGa_1−xAs Injection Lasers

P.G. McMullin, J.M. Blum, et al.

IEEE JQE

Conference paper

EXTENDED AMORPHOUS VACANCIES. AN ALTERNATIVE TO THE SELF-INTERSTITIAL IN Si.

J.A. Van Vechten

ICDS 1984

Paper

Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si

J.A. Van Vechten

Physical Review B

View all publications