Conference paper
Reliability challenges with ultra-low k interlevel dielectrics
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
M.W. Lane, C.E. Murray, et al.
Applied Physics Letters
C.-K. Hu, D. Canaperi, et al.
AMC 2003
R. Rosenberg, M. Ohring
Journal of Applied Physics