R. Ghez, J.S. Lew
Journal of Crystal Growth
The vibrational density of states of several models of hydrogenated amorphous silicon with one or two dangling bonds have been calculated using a modified Keating potential. The corresponding charge densities near the dangling bonds have also been calculated using the self-consistent pseudopotential method. The effect of mutual interaction between dangling bonds on the vibrational density of states and charge densities is also investigated. © 1985.
R. Ghez, J.S. Lew
Journal of Crystal Growth
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Mark W. Dowley
Solid State Communications