H.P. Meier, E. Van Gieson, et al.
Journal of Crystal Growth
Paper
X AND Ku BAND GaAs M.E.S.F.E.T.
Abstract
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz. © 1972, The Institution of Electrical Engineers. All rights reserved.
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