PRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS.
- D.J. Wolford
- H. Mariette
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
Conference paper
Publications
47 results for D.J. Wolford
Thermally activated exciton transfer in GaAs1-xPx:N
- J.A. Kash
- H. Mariette
- et al.
- 1985
- Physical Review B
PaperExciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:N
- H. Mariette
- J.A. Kash
- et al.
- 1985
- Physical Review B
PaperLow spin density amorphous hydrogenated germanium prepared by homogeneous chemical vapor deposition
- J.A. Reimer
- B.A. Scott
- et al.
- 1985
- Applied Physics Letters
PaperPressure dependence of shallow bound states in gallium arsenide
- D.J. Wolford
- J.A. Bradley
- 1985
- Solid State Communications
PaperNITROGEN ISOELECTRONIC TRAP IN GaAs.
- D.J. Wolford
- J.A. Bradley
- et al.
- 1984
- ICDS 1984
Conference paperNITROGEN ISOELECTRONIC TRAP IN GaAs.
- D.J. Wolford
- J.A. Bradley
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
Conference paperHomogeneous chemical vapor deposition
- B.A. Scott
- W.L. Olbricht
- et al.
- 1984
- JVSTA
PaperThe preparation of in situ doped hydrogenated amorphous silicon by homogeneous chemical vapor deposition
- B.S. Meyerson
- B.A. Scott
- et al.
- 1983
- Journal of Applied Physics
PaperEfficient visible photoluminescence in the binary a-Si:Hx alloy system
- D.J. Wolford
- J.A. Reimer
- et al.
- 1983
- Applied Physics Letters
Paper