High-gain lateral hot-electron device
- A. Palevski
- C.P. Umbach
- et al.
- 1989
- Applied Physics Letters
Paper
Publications
71 results for Mordehai Heiblum
Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s
- T. Sajoto
- M. Santos
- et al.
- 1989
- Applied Physics Letters
PaperInert gas reactive ion etching damage to GaAs using inverted heterojunctions
- C.M. Knoedler
- L. Osterling
- et al.
- 1989
- Journal of Applied Physics
PaperUniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K. Lee
- et al.
- 1989
- Applied Physics Letters
PaperOne-dimensional electron gas in GaAs: Periodic conductance oscillations as a function of density
- U. Meirav
- M.A. Kastner
- et al.
- 1989
- Physical Review B
PaperHot ballistic transport and phonon emission in a two-dimensional electron gas
- U. Sivan
- M. Heiblum
- et al.
- 1989
- Physical Review Letters
PaperLateral tunneling, ballistic transport, and spectroscopy in a two-dimensional electron gas
- A. Palevski
- M. Heiblum
- et al.
- 1989
- Physical Review Letters
PaperObservation of single-optical-phonon emission
- M. Heiblum
- D. Galbi
- et al.
- 1989
- Physical Review Letters
PaperHigh-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- K. Seo
- Mordehai Heiblum
- et al.
- 1989
- IEEE Electron Device Letters
PaperElectron energy spectroscopy and the observation of ballistic transport of hot electrons in the plane of a 2DEG
- A. Palevski
- M. Heiblum
- et al.
- 1989
- IEEE T-ED
Paper