Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
Paper
Publications
49 results for M.A. Tischler
Direct backside connection of optical fibers to GaAs detectors
- Robert W. Ade
- Eric R. Fossum
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperThe influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions
- M.A. Tischler
- H. Baratte
- et al.
- 1988
- Journal of Crystal Growth
PaperDeep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
PaperControlled carbon doping of GaAs by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1988
- Applied Physics Letters
PaperRecent progress in atomic layer epitaxy of III-V compounds
- S.M. Bedair
- B.T. McDermott
- et al.
- 1988
- Journal of Crystal Growth
PaperThe control and modeling of doping profiles and transients in MOVPE growth
- T.F. Kuech
- P.J. Wang
- et al.
- 1988
- Journal of Crystal Growth
PaperInAs/GaAs quantum well lasers grown by atomic layer epitaxy
- M.A. Tischler
- N.G. Anderson
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperAn Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures
- T.N. Jackson
- M.A. Tischler
- et al.
- 1981
- IEEE Electron Device Letters
Paper