SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Conference paper
Publications
84 results for Donald Canaperi
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Conference paperAtom motion of Cu and Co in Cu damascene lines with a CoWP cap
- C.-K. Hu
- L. Gignac
- et al.
- 2004
- Applied Physics Letters
PaperEffects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Conference paperHigh-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Conference paperFabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Conference paperA study of electromigration lifetime for Cu interconnects coated with CoWP, Ta/TaN, or SiC xN yH z
- C.-K. Hu
- D. Canaperi
- et al.
- 2003
- AMC 2003
Conference paper80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
PaperMetal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Conference paperElectron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Paper