Inversion channel mobility in high-κ high performance MOSFETs
- Z. Ren
- M.V. Fischetti
- et al.
- 2003
- IEDM 2003
Conference paper
Publications
102 results for Massimo V. Fischetti
Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2003
- Journal of Applied Physics
PaperSix-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- M.V. Fischetti
- Z. Ren
- et al.
- 2003
- Journal of Applied Physics
ReviewCharge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2003
- Journal of Applied Physics
PaperComment on "unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering" [Journal of Applied Physics 92, 3724 (2002)]
- M.V. Fischetti
- 2003
- Journal of Applied Physics
PaperQDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries
- S.E. Laux
- A. Kumar
- et al.
- 2002
- IEDM 2002
Conference paperCharge trapping in high K gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2002
- IEDM 2002
Conference paperBallistic FET modeling using QDAME: Quantum device analysis by modal evaluation
- Steven E. Laux
- Arvind Kumar
- et al.
- 2002
- IEEE TNANO
Conference paperOn the enhanced electron mobility in strained-silicon inversion layers
- M.V. Fischetti
- F. Gámiz
- et al.
- 2002
- Journal of Applied Physics
PaperHot-carrier charge trapping and reliability in high-K dielectrics
- Arvind Kumar
- Tak H. Ning
- et al.
- 2002
- VLSI Technology 2002
Conference paper