Monte Carlo calculations of laser-induced free electron heating in SiO2
- D. Arnold
- E. Cartier
- et al.
- 1990
- SPIE Laser-Induced Damage in Optical Materials 1990
Conference paper
Publications
102 results for Massimo V. Fischetti
Monte Carlo calculations of laser-induced free electron heating in SiO2
- D. Arnold
- E. Cartier
- et al.
- 1990
- SPIE Laser-Induced Damage in Optical Materials 1990
Conference paperSoft-x-ray induced core-level photoemission as a probe of hot-electron dynamics in SiO2
- F.R. McFeely
- E. Cartier
- et al.
- 1990
- Physical Review Letters
PaperThe use of simulation in semiconductor technology development
- D.C. Cole
- E.M. Buturla
- et al.
- 1990
- Solid State Electronics
PaperAre GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- M.V. Fischetti
- S.E. Laux
- 1989
- IEDM 1989
Conference paperMonte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors
- Wai Lee
- S.E. Laux
- et al.
- 1989
- IEDM 1989
Conference paperCoulombic and neutral electron trapping centers in SiO2
- D.A. Buchanan
- M.V. Fischetti
- et al.
- 1989
- Applied Surface Science
PaperMonte Carlo simulation of hot-carrier transport in real semiconductor devices
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Solid State Electronics
PaperThe physics of hot-electron degradation of Si MOSFET's: Can we understand it?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Applied Surface Science
PaperMonte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
- Massimo V. Fischetti
- Steven E. Laux
- 1988
- Physical Review B
Paper