Hot electrons in SiO2: ballistic to steady-state transport
- M.V. Fischetti
- D.J. DiMaria
- 1988
- Solid State Electronics
Paper
Publications
102 results for Massimo V. Fischetti
Vacuum emission of hot electrons from silicon dioxide at low temperatures
- D.J. DiMaria
- M.V. Fischetti
- 1988
- Journal of Applied Physics
PaperMonte-Carlo Simulation of Submicrometer Si n-MOSFET's at 77 and 300 K
- Steven E. Laux
- M.V. Fischetti
- 1988
- IEEE Electron Device Letters
PaperBallistic electron transport in thin silicon dioxide films
- M.V. Fischetti
- D.J. Dimaria
- et al.
- 1987
- Physical Review B
PaperElectron interference effects in quantum wells: Observation of bound and resonant states
- M. Heiblum
- M.V. Fischetti
- et al.
- 1987
- Physical Review Letters
PaperElectron avalanche injection on 10-nm dielectric films
- Leonello Dori
- Maurizio Arienzo
- et al.
- 1987
- Journal of Applied Physics
PaperHot electrons in silicon dioxide: Ballistic to steady-state transport
- D.J. DiMaria
- M.V. Fischetti
- 1987
- Applied Surface Science
PaperDirect observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
PaperSiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
PaperElectron heating studies in silicon dioxide: Low fields and thick films
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Paper