SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
Conference paper
Publications
138 results for B.S. Meyerson
Bonding, interfacial effects and adhesion in dlc
- A. Grill
- B.S. Meyerson
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperEpitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
PaperHeterojunction Bipolar Transistors Using Si-Ge Alloys
- Subramanian S. Iyer
- Gary L. Patton
- et al.
- 1989
- IEEE T-ED
PaperBase Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen Temperature
- Johannes M. C. Stork
- David L. Harame
- et al.
- 1989
- IEEE T-ED
PaperGraded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
PaperCooperative growth phenomena in silicon/germanium low-temperature epitaxy
- Bernard S. Meyerson
- Kevin J. Uram
- et al.
- 1988
- Applied Physics Letters
PaperHigh performance Si and SiGe-base pnp transistors
- D.L. Harame
- J.M.C. Stork
- et al.
- 1988
- IEDM 1988
Conference paperNonequilibrium boron doping effects in low-temperature epitaxial silicon films
- B.S. Meyerson
- F. Legoues
- et al.
- 1987
- Applied Physics Letters
PaperExcimer laser-induced deposition of silicon nitride thin films
- J.M. Jasinski
- B.S. Meyerson
- et al.
- 1987
- Journal of Applied Physics
Paper