Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Publications
138 results for B.S. Meyerson
High-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters
PaperSi/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
PaperGated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
PaperExtremely high electron mobility in Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
PaperFQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields
- R.B. Dunford
- R. Newbury
- et al.
- 1995
- Solid State Communications
PaperSi/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
PaperIdentification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
- K. Ismail
- F. Legoues
- et al.
- 1994
- Physical Review Letters
PaperHigh hole mobility in SiGe alloys for device applications
- K. Ismail
- J.O. Chu
- et al.
- 1994
- Applied Physics Letters
PaperUHVCVD growth of Si/SiGe heterostructures and their applications
- B.S. Meyerson
- K. Ismail
- et al.
- 1994
- Semiconductor Science and Technology
Paper