200 mm SiGe-HBT technology for wireless and mixed-signal applications
- D.L. Harame
- K. Schonenberg
- et al.
- 1994
- IEDM 1994
Conference paper
Publications
138 results for B.S. Meyerson
GaAs performance in Si technology: SiGe HBTs for mixed analog-digital applications
- J.M.C. Stork
- D.L. Harame
- et al.
- 1994
- GaAs IC 1994
Conference paperShubnikov-de Haas oscillations under hot-electron conditions in Si/Si1-xGex heterostructures
- G. Stöger
- G. Brunthaler
- et al.
- 1994
- Physical Review B
PaperSiGe-Channel Heterojunction p-MOSFET’s
- Sophie Verdonckt-Vandebroek
- Bernard S. Meyerson
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperSiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing
- P.W. Li
- E.S. Yang
- et al.
- 1994
- IEEE Electron Device Letters
PaperModulation-doped n-type Si/SiGe with inverted interface
- K. Ismail
- J.O. Chu
- et al.
- 1994
- Applied Physics Letters
PaperVertical Profile Optimization of Very High Frequency Epitaxial Si- and SiGe-Base Bipolar Transistors
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEDM 1993
Conference paperOptimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications
- D.L. Harame
- J.M.C. Stork
- et al.
- 1993
- IEDM 1993
Conference paperSpatially resolved Raman spectroscopy of a step graded Ge xSi1-x strain relief structure
- J.C. Tsang
- F.H. Dacol
- et al.
- 1993
- Applied Physics Letters
PaperElectron transport properties of Si/SiGe heterostructures: Measurements and device implications
- K. Ismail
- S. Nelson
- et al.
- 1993
- Applied Physics Letters
Paper