SiGe alloys: growth, properties and applications
- Maurizio Arienzo
- Subramanian S. Iyer
- et al.
- 1991
- Applied Surface Science
Paper
Publications
138 results for B.S. Meyerson
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- Siegfried R. Mader
- et al.
- 1991
- IEEE T-ED
PaperSubmicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
PaperSub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
PaperEpitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
Conference paperBistable conditions for low-temperature silicon epitaxy
- Bernard S. Meyerson
- Franz J. Himpsel
- et al.
- 1990
- Applied Physics Letters
PaperSiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
Conference paper63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
Conference paperSiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Conference paperLow temperature operation of Si and SiGe bipolar transistors
- E.F. Crabbe
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Conference paper