ZrN diffusion barrier in aluminum metallization schemesL. Krusin-ElbaumM. Wittmeret al.1983Thin Solid FilmsPaper
Atomic motion of dopant during interfacial silicide formationM. WittmerC.-Y. Tinget al.1983Thin Solid FilmsPaper
Redistribution of As during Pd2Si formation: Ion channeling measurementsM. WittmerC.-Y. Tinget al.1982Journal of Applied PhysicsPaper
The use of titanium-based contact barrier layers in silicon technologyC.-Y. TingM. Wittmer1982Thin Solid FilmsPaper