Competing relaxation mechanisms in strained layers
- J. Tersoff
- F. Legoues
- 1994
- Physical Review Letters
Paper
Publications
111 results for F.K. LeGoues
Self-aligned sources for dislocation nucleation: The key to low threading dislocation densities in compositionally graded thin films grown at low temperature
- F.K. LeGoues
- 1994
- Physical Review Letters
PaperHigh efficiency and low threshold current strained V-groove quantum-wire lasers
- Sandip Tiwari
- G. David Pettit
- et al.
- 1994
- Applied Physics Letters
PaperFormation of β-SiC nanocrystals by the relaxation of Si 1-yCy random alloy layers
- A.R. Powell
- F. Legoues
- et al.
- 1994
- Applied Physics Letters
PaperStrain relaxation and mosaic structure in relaxed SiGe layers
- P.M. Mooney
- F. Legoues
- et al.
- 1993
- Applied Physics Letters
PaperSurfactant coverage and epitaxy of Ge on Ga-terminated Si(111)
- J. Falta
- M. Copel
- et al.
- 1993
- Applied Physics Letters
PaperCrystallographic tilting resulting from nucleation limited relaxation
- F. Legoues
- P.M. Mooney
- et al.
- 1993
- Applied Physics Letters
PaperSurface morphology and alloy ordering in epitaxial growth of SiGe
- F.K. LeGoues
- J. Tersoff
- et al.
- 1993
- Physical Review Letters
ReviewNucleation of dislocations in SiGe layers
- P.M. Mooney
- F. Legoues
- et al.
- 1993
- MRS Fall Meeting 1993
Conference paperObservation of buried interfaces with low energy electron microscopy
- R.M. Tromp
- A.W. Denier Van Der Gon
- et al.
- 1993
- Physical Review Letters
Paper