Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters
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Publications
111 results for F.K. LeGoues
Defect self-annihilation in surfactant-mediated epitaxial growth
- M. Horn-Von Hoegen
- F. Legoues
- et al.
- 1991
- Physical Review Letters
PaperHydrogen segregation and trapping in the Al/Si(111) interface
- Joyce C. Liu
- A.D. Marwick
- et al.
- 1991
- Physical Review B
PaperAnomalous strain relaxation in SiGe thin films and superlattices
- F. Legoues
- B.S. Meyerson
- et al.
- 1991
- Physical Review Letters
PaperSi/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
- V.P. Kesan
- P.G. May
- et al.
- 1991
- Journal of Crystal Growth
PaperMicrostructure and strain relief of Ge films grown layer by layer on Si(001)
- F. Legoues
- M. Copel
- et al.
- 1990
- Physical Review B
PaperEffect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
PaperMagnetically filtered low-loss scanning electron microscopy
- Oliver C. Wells
- Francoise K. LeGoues
- et al.
- 1990
- Applied Physics Letters
PaperEPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Conference paperSurface-stress-induced order in SiGe alloy films
- F. Legoues
- V.P. Kesan
- et al.
- 1990
- Physical Review Letters
Paper