Electrical Characteristics of Very Thin SiO2 Deposited at Low Substrate Temperatures
- J. Batey
- E. Tierney
- et al.
- 1987
- IEEE Electron Device Letters
Paper
Publications
36 results for T.N. Nguyen
Evidence of the role of defects near the injecting interface in determining SiO2 breakdown
- P. Olivo
- B. Ricco
- et al.
- 1987
- Applied Physics Letters
PaperThe relation between positive charge and breakdown in metal-oxide-silicon structures
- Z.A. Weinberg
- T.N. Nguyen
- 1987
- Journal of Applied Physics
PaperCHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.
- T.N. Nguyen
- D.L. Harame
- et al.
- 1985
- IEDM 1985
Conference paperNITRIDED SiO//2 FILMS FOR VLSI APPLICATIONS.
- A. Ray
- C.J. Merz
- et al.
- 1984
- ECS Meeting 1984
Conference paperNITRIDED SiO//2 FILMS FOR VLSI APPLICATIONS.
- A. Ray
- C.J. Merz
- et al.
- 1984
- ECS Meeting 1984
Conference paper