New high resolution and high sensitivity deep UV, x-ray, and electron beam resists
- Michael Hatzakis
- Kevin J. Stewart
- et al.
- 1990
- Microelectronic Engineering
Paper
Publications
49 results for S. Rishton
Scanning capacitance microscopy on a 25 nm scale
- C.C. Williams
- W.P. Hough
- et al.
- 1989
- Applied Physics Letters
PaperOn the preparation of cross-sectional TEM samples using lithographic processing and reactive ion-etching
- J.T. Wetzel
- M. Jost
- et al.
- 1989
- Ultramicroscopy
PaperElectron beam lithography of sub-0.1μm circuits
- S. Rishton
- D. Kern
- et al.
- 1989
- Microelectronic Engineering
PaperA comparison of the E-beam sensitivities and relative O2-plasma stabilities of organosilicon polymers.Part III. Lithographic characteristics of poly-1,1,3-trimethyl-1-sila - and poly-1,1,3,3-tetramethyl-1,3- disilacyclobutenes and related silmethylene polymers
- E. Babich
- J. Paraszczak
- et al.
- 1989
- Microelectronic Engineering
PaperHigh Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
PaperInverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
PaperEXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986
Conference paperDesign and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
Paper