Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures
- Joachim N. Burghartz
- Carol L. Stanis
- et al.
- 1995
- Applied Physics Letters
Paper
Publications
67 results for J.N. Burghartz
High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier
- J.N. Burghartz
- M. Soyuer
- et al.
- 1995
- IEDM 1995
Conference paperOpportunities for standard silicon technology in RFMicrowave applications
- J.N. Burghartz
- M. Soyuer
- et al.
- 1995
- ESSDERC 1995
Conference paperMultilevel monolithic inductors in silicon technology
- M. Soyuer
- J.N. Burghartz
- et al.
- 1995
- Electronics Letters
PaperHigh-Performance Emitter-Up/Down SiGe HBT's
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1994
- IEEE Electron Device Letters
PaperA Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperA Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II—Circuit Performance and Device Self-Heating
- Joachim N. Burghartz
- Arturo O. Cifuentes
- et al.
- 1994
- IEEE Transactions on Electron Devices
PaperSubmicron CMOS Gate Electrode Discontinuity: Electrical Signature and Effect on Circuit Speed
- Keith A. Jenkins
- J.N. Burghartz
- et al.
- 1993
- IEDM 1993
Conference paperAPCVD-grown self-aligned SiGe-base HBTs
- J.N. Burghartz
- T.O. Sedgwick
- et al.
- 1993
- BCTM 1993
Conference paperAn ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
Conference paper