Publications

3 results for P. Bhattacharya

Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy
- - S. Sethi
  - P. Bhattacharya
- 1996
- Journal of Electronic Materials
Paper
High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- - K. Seo
  - Mordehai Heiblum
  - et al.
- 1989
- IEEE Electron Device Letters
Paper
Pseudomorphic InGaAs base ballistic hot-electron device
- - K. Seo
  - M. Heiblum
  - et al.
- 1988
- Applied Physics Letters
Paper