Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements
- P.W. Epperlein
- G.L. Bona
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
25 results for P. Roentgen
Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
- R. Sauer
- S. Nilsson
- et al.
- 1992
- Physical Review B
PaperLow-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers
- P. Linger
- G.L. Bona
- et al.
- 1992
- ISLC 1992
Conference paperJunction-side up operation of (Al)GaInP lasers with very low threshold currents
- P. Unger
- P. Roentgen
- et al.
- 1992
- Electronics Letters
PaperCompositional variation and ordering of GaxIn1-xP on GaAs structured substrates
- N.I. Buchan
- A. Jakubowicz
- et al.
- 1992
- Applied Physics Letters
PaperIn situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Applied Physics Letters
PaperMOVPE on patterned substrates: A new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- ESSDERC 1991
Conference paperSelective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates
- Y.D. Galeuchet
- P. Roentgen
- 1991
- Journal of Crystal Growth
PaperMOVPE of AlGaInP/GaInP heterostructures for visible lasers
- P. Roentgen
- W. Heuberger
- et al.
- 1991
- Journal of Crystal Growth
PaperMOVPE on patterned substrates: a new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Microelectronic Engineering
Paper