Scaling the gate dielectric: materials, integration, and reliability
- D.A. Buchanan
- 1999
- IBM J. Res. Dev
Paper
Publications
51 results for D.A. Buchanan
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
- S.H. Lo
- D.A. Buchanan
- et al.
- 1999
- IBM J. Res. Dev
PaperFabrication of midgap metal gates compatible with ultrathin dielectrics
- D.A. Buchanan
- F.R. McFeely
- et al.
- 1998
- Applied Physics Letters
ReviewModeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- VLSI Technology 1997
Conference paperQuantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- IEEE Electron Device Letters
PaperCMOS scaling into the nanometer regime
- Yuan Taur
- Douglas A. Buchanan
- et al.
- 1997
- Proceedings of the IEEE
PaperLight emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
- E. Cartier
- J.C. Tsang
- et al.
- 1997
- Microelectronic Engineering
PaperDefect instability in ultra-thin oxides on silicon
- L. Xie
- K.R. Farmer
- et al.
- 1997
- Microelectronic Engineering
PaperReliability and integration of ultra-thin gate dielectrics for advanced CMOS
- D.A. Buchanan
- S.H. Lo
- 1997
- Microelectronic Engineering
PaperOn the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1997
- Microelectronic Engineering
Paper