IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
Paper
Publications
40 results for Carol L. Stanis
The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment-The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
PaperThe role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory
- S. Stiffler
- Carol Stanis
- et al.
- 1992
- Journal of Applied Physics
PaperChemical vapor deposition of copper alloys
- C. Smart
- S.K. Reynolds
- et al.
- 1992
- MRS Proceedings 1992
Conference paperNovel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
Conference paperIdentification Of Perimeter Depletion And Emitter Plug Effects In Deep-Submicrometer, Shallow-Junction Polysilicon Emitter Bipolar Transistors
- Joachim N. Burghartz
- Jack Yuan-Chen Sun
- et al.
- 1992
- IEEE T-ED
PaperPartial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
PaperDopant diffusion in silicides: Effect of diffusion paths
- Carol Stanis
- J.M. Cotte
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperThe thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
- S. Stiffler
- J.H. Comfort
- et al.
- 1991
- Journal of Applied Physics
PaperDevice design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Conference paper