A Comprehensive Study of Hot-Carrier Instability in P- and N-Type Poly-SI Gated MOSFET’s
- Charles C.-H. Hsu
- Duen-Shun Wen
- et al.
- 1994
- IEEE Transactions on Electron Devices
Paper
Publications
6 results for D.S. Wen
Characteristics of vertical p-channel MOSFETs for high density circuit application
- D.S. Wen
- W.H. Chang
- et al.
- 1991
- VLSI-TSA 1991
Conference paperCharge trapping and retention in ultra-thin oxide-nitride-oxide structures
- P. Olivo
- Z.A. Weinberg
- et al.
- 1991
- Solid State Electronics
PaperA self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- D.S. Wen
- C.C.-H. Hsu
- et al.
- 1989
- IEDM 1989
Conference paperCharacteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Conference paperA comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- C.C.-H. Hsu
- D.S. Wen
- et al.
- 1989
- IEDM 1989
Conference paper