Novel low-resistance ohmic contact to n-type GaAs using Cu3Ge
- M.O. Aboelfotoh
- C.L. Lin
- et al.
- 1994
- Applied Physics Letters
Paper
Publications
10 results for C.L. Lin
Deep levels and band bending at GaP(100) and (110) surfaces
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1994
- Surface Science
PaperHigh transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contacts
- C.L. Lin
- M.O. Aboelfotoh
- et al.
- 1993
- IEDM 1993
Conference paperBase recombination in high performance InGaAs/InP HBTs
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- Device Research Conference 1993
Conference paperSolubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy
- Peter D. Kirchner
- Andreas Vaterlaus
- et al.
- 1993
- Journal of Crystal Growth
PaperInP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- R.C. Gee
- C.L. Lin
- et al.
- 1993
- Electronics Letters
PaperIVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
PaperCross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy
- R.M. Feenstra
- E.T. Yu
- et al.
- 1992
- Applied Physics Letters
PaperPhotoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters
PaperInP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
Paper