Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics
- X.J. Zhou
- L. Tsetseris
- et al.
- 2004
- Applied Physics Letters
Paper
Publications
76 results for E. Gusev
Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
- J.A. Felix
- J.R. Schwank
- et al.
- 2004
- Microelectronics Reliability
PaperInterface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- J.A. Felix
- H.D. Xiong
- et al.
- 2003
- INFOS 2003
Conference paperCharge trapping and detrapping in HfO2 high-κ gate stacks
- E. Gusev
- C. D'Emic
- et al.
- 2003
- INFOS 2003
Conference paperAsymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs with HfO2 Gate Dielectric on Ultrathin SiON Buffer Layer
- J.-P. Han
- E.M. Vogel
- et al.
- 2004
- IEEE Electron Device Letters
PaperTransport and exchange of hydrogen isotopes in silicon-device-related stacks
- C. Krug
- E. Gusev
- et al.
- 2004
- Journal of Applied Physics
PaperCharge trapping studies on ultrathin ZrO 2 and HfO 2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation
- Shriram Ramanathan
- Paul C. McIntyre
- et al.
- 2004
- Applied Physics Letters
PaperCharge detrapping in HfO 2 high-κ gate dielectric stacks
- E. Gusev
- C. D'Emic
- 2003
- Applied Physics Letters
PaperLow-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks
- H.D. Xiong
- D.M. Fleetwood
- et al.
- 2003
- Applied Physics Letters
PaperInversion channel mobility in high-κ high performance MOSFETs
- Z. Ren
- M.V. Fischetti
- et al.
- 2003
- IEDM 2003
Conference paper