High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters
Paper
Publications
76 results for E. Gusev
Interface reactions in ZrO 2 based gate dielectric stacks
- M. Gribelyuk
- A.C. Callegari
- et al.
- 2002
- Journal of Applied Physics
PaperHot-carrier charge trapping and reliability in high-K dielectrics
- Arvind Kumar
- Tak H. Ning
- et al.
- 2002
- VLSI Technology 2002
Conference paperMobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Conference paperMeasurement of barrier heights in high permittivity gate dielectric films
- S. Zafar
- E. Cartier
- et al.
- 2002
- Applied Physics Letters
PaperLow temperature metal organic chemical vapor deposition of aluminum oxide thin films for advanced CMOS gate dielectric applications
- Spyridon Skordas
- Filippos Papadatos
- et al.
- 2002
- MRS Proceedings 2002
Conference paperUltrathin high-K metal oxides on silicon: Processing, characterization and integration issues
- E. Gusev
- E. Cartier
- et al.
- 2001
- Microelectronic Engineering
Conference paperUltrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
- M.L. Green
- E. Gusev
- et al.
- 2001
- Journal of Applied Physics
ReviewRobustness of ultrathin aluminum oxide dielectrics on Si(001)
- M. Copel
- E. Cartier
- et al.
- 2001
- Applied Physics Letters
PaperUltrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Paper