A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applicationsS. KrishnanU. Kwonet al.2011IEDM 2011Conference paper
Performance elements for 28nm gate length bulk devices with gate first high-k metal gateJun YuanC. Gruensfelderet al.2010ICSICT 2010Conference paper