Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
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Conference paper
Publications
4 results for O. Faynot
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
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- Applied Physics Letters
PaperImpact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
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Conference paperHigh performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
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- IEDM 2013
Conference paper