Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source
- M.V. Fischetti
- S. Jin
- et al.
- 2009
- IWCE 2009
Conference paper
Publications
4 results for N. Sano
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model
- M.V. Fischetti
- S. Jin
- et al.
- 2009
- Journal of Computational Electronics
PaperHole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
- N. Sano
- M.V. Fischetti
- et al.
- 1998
- IWCE 1998
Conference paperFull-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs
- M.V. Fischetti
- N. Sano
- et al.
- 1996
- SISPAD 1996
Conference paper