Sub-60 nm physical gate length SOI CMOS
- I.Y. Yang
- K. Chen
- et al.
- 1999
- IEDM 1999
Conference paper
Publications
15 results for Scott Crowder
High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay
- M. Hargrove
- S.W. Crowder
- et al.
- 1998
- IEDM 1998
Conference paperTrade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997
Conference paperElectrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
- L.K. Han
- S.W. Crowder
- et al.
- 1997
- IEDM 1997
Conference paperHigh-performance 0.08 μm CMOS
- L. Su
- S. Subbanna
- et al.
- 1996
- VLSI Technology 1996
Conference paper