Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Conference paper
Publications
90 results for Meikei Ieong
20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device
- K.L. Lee
- F. Cardone
- et al.
- 2003
- IEDM 2003
Conference paperDevice Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperThree dimensional CMOS devices and integrated circuits
- Meikei Ieong
- Kathryn W. Guarini
- et al.
- 2003
- CICC 2003
Conference paperScaling beyond the 65 nm node with FinFET-DGCMOS
- E. Nowak
- T. Ludwig
- et al.
- 2003
- CICC 2003
Conference paperRecent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Conference paperIntegration of 1GB/sec Silicon Lateral Trench Photodetector with High-Performance CMOS
- M. Yang
- J. Schaub
- et al.
- 2003
- VLSI Technology 2003
Conference paperPerformance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
PaperExtension and source/drain design for high-performance FinFET devices
- Jakub Kedzierski
- Meikei Ieong
- et al.
- 2003
- IEEE Transactions on Electron Devices
PaperStrained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Conference paper