Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Conference paper
Publications
90 results for Meikei Ieong
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Conference paperHigh performance double-gate device technology challenges and opportunities
- M. Ieong
- H.-S. Wong
- et al.
- 2002
- ISQED 2002
Conference paperCarbon implanted halo for super halo characteristic NFETs in bulk and SOI
- John Ellis-Monaghan
- Kam-Leung Lee
- et al.
- 2001
- ESSDERC 2001
Conference paperHigh performance of planar double gate MOSFETs with thin backgate dielectrics
- E.C. Jones
- M. Ieong
- et al.
- 2001
- DRC 2001
Conference paperStrained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
Conference paperTheoretical determination of the temporal and spatial structure of α-particle induced electron-hole pair generation in silicon
- Phil Oldiges
- Robert Dennard
- et al.
- 2000
- IEEE TNS
PaperMonte Carlo modeling of threshold variation due to dopant fluctuations
- D.J. Frank
- Y. Taur
- et al.
- 1999
- VLSI Circuits 1999
Conference paperSub-60 nm physical gate length SOI CMOS
- I.Y. Yang
- K. Chen
- et al.
- 1999
- IEDM 1999
Conference paperMonte Carlo modeling of threshold variation due to dopant fluctuations
- D.J. Frank
- Y. Taur
- et al.
- 1999
- VLSI Technology 1999
Conference paper