Optimized interfacial strength for dense and porous SiCOH
- D.D. Restaino
- Steve Molis
- et al.
- 2007
- ADMETA 2007
Conference paper
Publications
8 results for J. Widodo
Line resistance and electromigration variations induced by hydrogen-based plasma modifications to the silicon carbonitride/copper interface
- E. Todd Ryan
- Jeremy Martin
- et al.
- 2007
- JES
PaperA 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Conference paperStress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006
Conference paper65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Conference paperPECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperLower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Conference paper