Quick turnaround technique for highlighting defects in thin Si/SiGe bilayers
- S.W. Bedell
- D.K. Sadana
- et al.
- 2004
- Electrochemical and Solid-State Letters
Paper
Publications
22 results for Huajie Chen
Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
PaperInfluence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
Conference paperStrained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- MRS Proceedings 2004
Conference paperA survey of defects in strained Si layers
- S.W. Bedell
- H. Chen
- et al.
- 2004
- MRS Proceedings 2004
Conference paperVertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate
- Jin Cai
- Mahender Kumar
- et al.
- 2003
- BCTM 2003
Conference paperStrained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Conference paperPerformance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
Conference paperMobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Conference paperCharacteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Conference paper